leshan radio company, ltd. general purpose transistors maximum ratings rating symbol max unit collector-emitter voltage v ceo -25 v collector-base voltage v cbo -40 v emitter-base voltage v ebo collector current c -500 madc thermal characteristics characteristic symbol max unit total device dissipation fr-5 board,(1) p d t a =25c 225 mw derate above 25c 1.8 mw/c thermal resistance,junction to ambient r ja 556 c/w total device dissipation p d alumina substrate,(2) ta=25c 300 mw derate above 25c 2.4 mw/c thermal resistance,junction to ambient r ja 417 c/w junction and storage temperature t j, t s t g -55 to +150 c 1 3 2 sot?23 pnp silicon feature ? high current capacity in compact package. ? epitaxial planar type. ? np n complement: ? device marking and ordering information device marking 1gb 1gb 1gd 1gd 10000/tape&reel shipping 3000/tape&reel 10000/tape&reel 3000/tape&reel 1 base 2 emitter collector 3 1gf 1gf 1gh 10000/tape&reel 3000/tape&reel 10000/tape&reel 3000/tape&reel 1gh we declare that the material of product compliance with rohs requirements. lmbt2516qlt1g series i -5 v 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. rev.o 1/3 lmbt2506qlt1g lmbt2516plt1g lmbt2516plt3g lmbt2516qlt1g lmbt2516qlt3g lmbt2516rlt1g lmbt2516rlt3g lmbt2516slt1g lmbt2516slt3g
leshan radio company, ltd. electrical characteristics (t a =25c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector-emitter breakdown voltage v (br)ceo -25 ?? v (i c =-1.0ma) emitter-base breakdown voltage v (br)ebo -5 ?? v (i e =-100 ? ) collector-base breakdown voltage v (br)cbo -40 ?? v (i c =-100 ? ) collector cutoff current (v cb =-30v) i cbo ? ? -100 na emitter cutoff current (v eb =-4v) i ebo ? ? -100 na dc current gain i c =-100ma,v ce =-1v h fe 1 0 0 - 600 collector-emitter saturation voltage (i c =-500ma,i b =-50ma) v ce(s) - - electrical characteristics (t a =25c unless otherwise noted) characteristic symbol min typ max unit on characteristics v note : * pqrs h fe 1 0 0~200 150~300 200~400 300~600 lmbt2516qlt1g series -0.5 rev.o 2/3 base emitter saturation voltage (i c =-500ma,i b =-50ma) v be(s) - - v -1.2
leshan radio company, ltd. notes: 1. dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 pin 1. base 2. emitter 3. collector sot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 lmbt2516qlt1g series rev.o 3/3
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